| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MTP2N60 | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOSE-FET™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh | MotorolaMotorola, Inc 摩托罗拉 | Motorola | |
MTP2N60 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOSE-FET™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
N-Channel Enhancement-Mode Silicon Gate TMOSE−FETPowerFieldEffectTransistor N−ChannelEnhancement−ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage−blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE−FETisdesignedtowithstandhi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Power Field Effect Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N2Amps竊?00VoltsN-ChannelMOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd | ESTEK | ||
2Amps,600/650VoltsN-CHANNELPOWERMOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
600VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | DYELEC | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
2A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
2Amps,600VoltsN-CHANNELMOSFET FEATURE ●2A,600V,RDS(ON)=4Ω@VGS=10V/1A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
TO-251Plastic-EncapsulateMOSFET N-ChannelMOSFET Features ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | HDSEMI |
详细参数
- 型号：
MTP2N60
- 制造商：
MOTOROLA
- 制造商全称：
Motorola, Inc
- 功能描述：
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 220 |
161155 |
明嘉莱只做原装正品现货 |
询价 | ||
ON |
23+ |
TO-220 |
6893 |
询价 | |||
ON |
N/A |
2520 |
询价 | ||||
ON |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
MOT |
06+ |
TO-220 |
1800 |
全新原装 绝对有货 |
询价 | ||
ON |
2020+ |
TO-220 |
35000 |
100%进口原装正品公司现货库存 |
询价 | ||
MOT/ON |
23+ |
TO-TO-220 |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
MOT/ON |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
ON/安森美 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
MOT/ON |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 |
相关规格书
更多- MTP2N60E
- MTP2P50E
- MTP2P50EG
- MTP2S-E10-C39
- MTP3
- MTP3001N3
- MTP3055
- MTP3055E
- MTP3055V
- MTP3055VL
- MTP30N06VL
- MTP30P06
- MTP30X
- MTP337K010P1C
- MTP33N10E
- MTP3403AN3
- MTP35A1
- MTP36N06
- MTP3H-E10
- MTP3H-E10-C
- MTP3H-E6-C
- MTP3N12
- MTP3N25E
- MTP3N40
- MTP3N55
- MTP3N60E
- MTP3NA60
- MTP3S-E10-C
- MTP3S-E6-C
- MTP401G-280-E
- MTP405J3
- MTP40N06M
- MTP410G
- MTP410W
- MTP4409H8
- MTP4423Q8
- MTP44G
- MTP44U
- MTP44W
- MTP457M006P1C
- MTP46G
- MTP46W
- MTP476M060P1C
- MTP4835V8
- MTP48K1E3HN
相关库存
更多- MTP2P50
- MTP2P50E_10
- MTP2S-E10-C
- MTP2S-E6-C
- MTP30
- MTP3016
- MTP3055A
- MTP3055EL
- MTP3055V_L86Z
- MTP3055VL_Q
- MTP30N08M
- MTP30P06V
- MTP336M060P1C
- MTP33N10
- MTP3401N3
- MTP3403N3
- MTP35W
- MTP36N06V
- MTP3H-E10C
- MTP3H-E10-C39
- MTP3N100E
- MTP3N120E
- MTP3N35
- MTP3N50E
- MTP3N60
- MTP3N60FI
- MTP3-PHASE
- MTP3S-E10-C39
- MTP401-40B-E
- MTP401-HEAD
- MTP406K030P1B
- MTP40N10E
- MTP410U
- MTP-44
- MTP4413Q8
- MTP4435Q8
- MTP-44-G
- MTP-44U
- MTP456K030P1B
- MTP45N05E
- MTP46U
- MTP476M006P1A
- MTP4835L3
- MTP48G
- MTP48K1E3HNBG
