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FDB3652

N-ChannelPowerTrenchMOSFET100V,61A,16m?

Features •rDS(ON)=14mΩ(Typ.),VGS=10V,ID=61A •Qg(tot)=41nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCConvertersandOff-lineUPS •DistributedPowerArchitectures

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3652

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=61A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmo

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDI3652

N-ChannelPowerTrenchMOSFET100V,61A,16m?

Features •rDS(ON)=14mΩ(Typ.),VGS=10V,ID=61A •Qg(tot)=41nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCConvertersandOff-lineUPS •DistributedPowerArchitectures

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP3652

N-ChannelPowerTrenchMOSFET100V,61A,16m?

Features •rDS(ON)=14mΩ(Typ.),VGS=10V,ID=61A •Qg(tot)=41nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCConvertersandOff-lineUPS •DistributedPowerArchitectures

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP3652

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=61A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

GPDR3652

RECTIFIERDIODE

GPSEMIGreen Power Solutions srl

Green Power Solutions srl

GPDR3652

RECTIFIERDIODE

RECTIFIERDIODE VOLTAGEUPTO2400V AVERAGECURRENT6520A SURGECURRENT60kA

GPSEMIGreen Power Solutions srl

Green Power Solutions srl

HP-3652-B

HANDHELDPLASTICSTYLE2

BUD

Bud Industries

JHV3652

HIGHVOLTAGERECTIFIERASSEMBLY

MicrosemiMicrosemi Corporation

美高森美美高森美公司

KDB3652

N-ChannelPowerTrenchMOSFET

Features ●rDS(ON)=14mΩ(Typ.),VGS=10V,ID=61A ●Qg(tot)=41nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

LT3652

HighVoltageHighCurrentControllerforBatteryChargingandPowerManagement

LINERLinear Technology

线性技术公司

LT3652

PowerTracking2ABatteryChargerforSolarPower

LINERLinear Technology

线性技术公司

LT3652

35V/3.2ALead-AcidStep-DownBatteryChargerwithPowerPathandI2CTelemetry

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

LT3652

35V/3.2AMulticellLithium-IonStep-DownBatteryChargerwithPowerPathandI2CTelemetry

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

LT3652

35V/3.2AMulticellLiFePO4Step-DownBatteryChargerwithPowerPathandI2CTelemetry

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

LT3652

Monolithic4AHIghVoltage2-CellLi-IonBatteryCharger

LINERLinear Technology

线性技术公司

LT3652

HighVoltageHighCurrentControllerforBatteryChargingwithMaximumPowerPointControl

LINERLinear Technology

线性技术公司

LT3652EDD

PowerTracking2ABatteryChargerforSolarPower

LINERLinear Technology

线性技术公司

LT3652EDDPBF

PowerTracking2ABatteryChargerforSolarPower

LINERLinear Technology

线性技术公司

LT3652EDDTRPBF

PowerTracking2ABatteryChargerforSolarPower

LINERLinear Technology

线性技术公司

供应商型号品牌批号封装库存备注价格
MAGNACHIP/美格纳
21+
SOP-8
15653
原装现货、工厂库存
询价
MAGNACHIP
2022+
SOP
5000
原厂授权代理 价格绝对优势
询价
MAGNACHIP/美格纳
22+
SOP8
9850
只做原装正品假一赔十!正规渠道订货!
询价
Bychip
23+
SOP8
10000
高品质替代,技术支持,参数选型
询价
MAGNACHIP/美格纳
23+
SOP8
30000
代理原装正品,假一赔十
询价
MAGNACHIP/美格纳
2410+
SOP-8P
50000
原装正品.假一赔百.正规渠道.原厂追溯.
询价
MAGNACHI
10+
SOP8
3000
现货原装库存热卖
询价
MAGNACHIP
2016+
SOP8
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
MAGNACHIP
11CN
SOIC-8
1550
原厂直销
询价
MAGNACHIP
17+
SOIC-8
6200
100%原装正品现货
询价
更多MDS3652URH供应商 更新时间2024-6-4 14:02:00