首页 >M58BW016BBZA>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

M58BW016BBZA

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016BB

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016BBT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016BT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016BTT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016BTZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYXNUMONYX

恒忆

M58BW016DB

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

M58BW016DBT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DBZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DT

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYXNUMONYX

恒忆

M58BW016DT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DT

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DT

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

M58BW016DTT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DTZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016FB

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYXNUMONYX

恒忆

M58BW016FB

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    M58BW016BBZA

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

供应商型号品牌批号封装库存备注价格
ST
21+
QFP-100
6688
十年老店,原装正品
询价
ST
23+
BGA
18000
询价
ST
2021+
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST
BGA
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST
1844+
QFP
9852
只做原装正品假一赔十为客户做到零风险!!
询价
ST
16+
QFP
2500
进口原装现货/价格优势!
询价
MITSUBIS
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
询价
602
询价
BGA
2779
100%原装正品!现货热价热卖!可开17%增值税票!
询价
23+
N/A
46080
正品授权货源可靠
询价
更多M58BW016BBZA供应商 更新时间2024-5-23 11:24:00