M58BW016BB资料datasheet下载供应价格-114ic电子网

首页 >M58BW016BB>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
M58BW016BB	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB100T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB100T6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB100ZA3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB100ZA6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB80T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB80T6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB80ZA3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB80ZA6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB90T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB90T6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB90ZA3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BB90ZA6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BBT	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BBZA	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BBZA	文件：895.86 Kbytes Page：63 Pages	16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BT	文件：895.86 Kbytes Page：63 Pages	16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BTT	文件：895.86 Kbytes Page：63 Pages	16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016BTZA	文件：895.86 Kbytes Page：63 Pages	16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016DB	文件：895.86 Kbytes Page：63 Pages	16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

12 >>>

详细参数

型号：
M58BW016BB
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市莱克讯科技有限公司	M58BW016BB80T3ES	ST	2017+	QFP	32568	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市拓亿芯电子有限公司	M58BW016BB80T3ES	ST	23+	QFP	30000	代理全新原装现货,价格优势	询价
深圳市瑞浩芯科技有限公司	M58BW016BB80T3ES	ST	20+	QFP	25000	全新原装现货,假一赔十	询价
深圳市汇莱威科技有限公司	M58BW016BB80T3	ST/意法		QFP	265209	假一罚十原包原标签常备现货!	询价
深圳市明盛嘉电子科技有限公司	M58BW016BB80T3	ST/意法	21+	QFP	5000	原装现货/假一赔十/支持第三方检验	询价
深圳市威尔健半导体有限公司	M58BW016BB80T3	ST/意法	23+	QFP	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	M58BW016BB80T3	ST/意法	2022	QFP	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市鹏锦翔科技有限公司一部	M58BW016BB80T3ES	ST	20+	QFP	25000	全新原装现货假一赔十	询价
深圳市环球伟业电子有限公司	M58BW016BB80T3ES	ST/STMicroelectronics/意法半导	21+	QFP	63	优势代理渠道,原装正品,可全系列订货开增值税票	询价
贸泽芯城（深圳）电子科技有限公司	M58BW016BB80T3	ST/意法	22+	QFP-80	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价

更多M58BW016BB供应商更新时间2024-5-17 8:29:00

详细参数

相关规格书

相关库存