首页 >M58BW016DB>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

M58BW016DB

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB

16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYXNUMONYX

恒忆

M58BW016DB

16 Mbit (512 Kbit x 32, boot block, burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

M58BW016DB100T3T

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB100T6T

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB100ZA3T

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB100ZA6T

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB70T3FF

16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB70T3FT

16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB70ZA3FF

16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB70ZA3FT

16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB7T3FF

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYXNUMONYX

恒忆

M58BW016DB7T3FT

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYXNUMONYX

恒忆

M58BW016DB7ZA3FF

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYXNUMONYX

恒忆

M58BW016DB7ZA3FT

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYXNUMONYX

恒忆

M58BW016DB80T3FF

16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB80T3FT

16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB80T3T

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58BW016DB80T6T

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    M58BW016DB

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

供应商型号品牌批号封装库存备注价格
ST
23+
BGA
18000
询价
ST
2021+
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST
BGA
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
BOSCH
05+
QFP-80
618
询价
ST
16+
QFP
2500
进口原装现货/价格优势!
询价
ST
06+
?QFP-80
1000
全新原装 绝对有货
询价
ST
1408+
QFP80
8000
绝对原装进口现货可开增值税发票
询价
ST
05+
QFP
620
特价热销现货库存100%原装正品欢迎来电订购!
询价
Numonyx-ADIVISIONOFMICRO
2022
ICFLASH16MBIT70NS80PQFP
5058
原厂原装正品,价格超越代理
询价
ST
2017+
QFP80
22556
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
更多M58BW016DB供应商 更新时间2024-5-24 18:46:00