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M28F201-90K1R中文资料PDF规格书
M28F201-90K1R规格书详情
DESCRIPTION
The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
■ 5V ± 10 SUPPLY VOLTAGE
■ 12V PROGRAMMING VOLTAGE
■ FAST ACCESS TIME: 70ns
■ BYTE PROGRAMMING TIME: 10µs typical
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ LOW POWER CONSUMPTION
– Active Current: 15mAtypical
– Stand-by Current: 10µA typical
■ 10,000 PROGRAM/ERASE CYCLES
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ OTP COMPATIBLE PACKAGES and PINOUTS
■ ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– Device Code: F4h
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
原装 |
22+23+ |
PLCC-28 |
17402 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
PLCC-28 |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
23+ |
TSOP-32 |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST/意法 |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST |
99+ |
PLCC-28 |
4904 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
20+ |
PLCC-28 |
25000 |
全新原装现货,假一赔十 |
询价 | ||
ST意法半导体 |
22+21+ |
TSOP |
3000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
ST |
2017+ |
TSSOP |
32156 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
ST |
2023+ |
99+ |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
ST/意法 |
PLCC-32 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |