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M28F201-70XN6R中文资料PDF规格书
M28F201-70XN6R规格书详情
DESCRIPTION
The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
■ 5V ± 10 SUPPLY VOLTAGE
■ 12V PROGRAMMING VOLTAGE
■ FAST ACCESS TIME: 70ns
■ BYTE PROGRAMMING TIME: 10µs typical
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ LOW POWER CONSUMPTION
– Active Current: 15mAtypical
– Stand-by Current: 10µA typical
■ 10,000 PROGRAM/ERASE CYCLES
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ OTP COMPATIBLE PACKAGES and PINOUTS
■ ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– Device Code: F4h
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
430 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
原装 |
22+23+ |
PLCC-28 |
17402 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
22+ |
TSSOP |
29240 |
原装正品现货,可开13个点税 |
询价 | ||
ST意法半导体 |
24+23+ |
TSOP |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
ST |
PLCC-32 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
22+ |
PLCC-28 |
30000 |
原装正品 |
询价 | ||
ST |
23+ |
PLCC-28 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
ST |
22 |
PLCC-28 |
25000 |
3月31原装,微信报价 |
询价 | ||
ST |
20+ |
PLCC-28 |
25000 |
全新原装现货,假一赔十 |
询价 |