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M28F201-70K6R中文资料PDF规格书
M28F201-70K6R规格书详情
DESCRIPTION
The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
■ 5V ± 10 SUPPLY VOLTAGE
■ 12V PROGRAMMING VOLTAGE
■ FAST ACCESS TIME: 70ns
■ BYTE PROGRAMMING TIME: 10µs typical
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ LOW POWER CONSUMPTION
– Active Current: 15mAtypical
– Stand-by Current: 10µA typical
■ 10,000 PROGRAM/ERASE CYCLES
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ OTP COMPATIBLE PACKAGES and PINOUTS
■ ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– Device Code: F4h
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
21+ |
TSOP |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
ST/STMicroelectronics/意法半导 |
21+ |
PLCC-28 |
4904 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法 |
22+ |
TSOP-32 |
7685 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
ST |
22+ |
PLCC-28 |
30000 |
原装正品 |
询价 | ||
ST |
2023+ |
99+ |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
ST/意法 |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
23+ |
NA/ |
430 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
原装 |
22+23+ |
PLCC-28 |
17402 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
22+ |
TSSOP |
29240 |
原装正品现货,可开13个点税 |
询价 | ||
ST意法半导体 |
24+23+ |
TSOP |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 |