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IXTQ44N50P

PolarHV Power MOSFET

N-ChannelEnhancementModeAvalancheRated Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Integrated Circuits Division

IXYS

IXTQ44N50P

N-Channel Enhancement Mode Power MOSFET

IXYS

IXYS Integrated Circuits Division

IXYS

IXTQ44N50P

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXTQ44N50P_V01

N-Channel Enhancement Mode Power MOSFET

IXYS

IXYS Integrated Circuits Division

IXYS

FDA44N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDH44N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=44A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested DESCRIPTION motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDH44N50

44A,500V,0.12Ohm,N-ChannelSMPSPowerMOSFET

Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

IXFE44N50Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastintrins

IXYS

IXYS Integrated Circuits Division

IXYS

IXFH44N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Integrated Circuits Division

IXYS

IXFH44N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXFK44N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process UnclampedInductiveSwitching(UIS

IXYS

IXYS Integrated Circuits Division

IXYS

IXFK44N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXFK44N50

HiPerFETPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXYS

IXFK44N50F

HiPerRFPowerMOSFETsF-ClassMegaHertzSwitchingSingleMOSFETDie

SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features RFCapableMOSFETs DoubleMetalProcessforLowGateResistance AvalancheRated LowPackageInductance FastIntrinsicRectifier

IXYS

IXYS Integrated Circuits Division

IXYS

IXFK44N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXFK44N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXFK44N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Integrated Circuits Division

IXYS

IXFK44N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXFK44N50Q

HiPerFETPowerMOSFETsQ-CLASS

IXYS

IXYS Integrated Circuits Division

IXYS

IXFN44N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process UnclampedInductiveSwitching(UIS

IXYS

IXYS Integrated Circuits Division

IXYS

详细参数

  • 型号:

    IXTQ44N50

  • 功能描述:

    MOSFET 44 Amps 500V 0.14 Ohm Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
23+
TO-3P
30000
晶体管-分立半导体产品-原装正品
询价
IXYS
07+
TO-3P
100
询价
IXYS
23+
TO-3P
5000
专做原装正品,假一罚百!
询价
23+
N/A
90150
正品授权货源可靠
询价
IXYS
1746+
TO3P
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
VB
2019
TO-3P
55000
绝对原装正品假一罚十!
询价
IXYS
2020+
TO-3P
37870
公司代理品牌,原装现货超低价清仓!
询价
IXYS
2020+
TO-3P
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
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IXYS
1809+
TO-3P
326
就找我吧!--邀您体验愉快问购元件!
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更多IXTQ44N50供应商 更新时间2024-4-28 15:09:00