零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IXFR26N60 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
HiPerFETTM Power MOSFETs ISOPLUS247 Q-CLASS HiPerFET™PowerMOSFETsISOPLUS247™Q-CLASS (ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalanceRated,HighdV/dt LowGateChargeandCapacitances Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2 | IXYS IXYS Integrated Circuits Division | IXYS | ||
SMPSMOSFET FeaturesandBenefits •Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Applica | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.25Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFETPowerMOSFET(VDSS=600V,RDS(on)typ.=210m廓,Trrtyp.=170ns,ID=26A) FeaturesandBenefits •Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity | VishayVishay Siliconix 威世科技 | Vishay | ||
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated • | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV™PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features •FastRecoverydiode •UnclampedInductiveSwitching(UIS)rated •Internationalstandardpackages •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavi | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●FastintrinsicRectifier Advantages ●Easytomount ●Spacesavi | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=270mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV™PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features •FastRecoverydiode •UnclampedInductiveSwitching(UIS)rated •Internationalstandardpackages •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavi | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号:
IXFR26N60
- 功能描述:
MOSFET 23 Amps 600V 0.25 Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
VB |
2019 |
ISOPLUS247TM |
55000 |
绝对原装正品假一罚十! |
询价 | ||
IR |
23+ |
ISOPLUS247TM |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IXYS |
18+ |
TO-247 |
2050 |
公司大量全新原装 正品 随时可以发货 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
I |
23+ |
ISOPLUS247TM |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
ISOPLUS247? |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
ISOPLUS247? |
13880 |
公司只售原装,支持实单 |
询价 |
相关规格书
更多- IXFR26N60Q
- IXFR30N110P
- IXFR30N50Q
- IXFR32N100P
- IXFR32N50Q
- IXFR32N80P
- IXFR34N80
- IXFR36N60P
- IXFR38N80Q2_08
- IXFR40N50Q2_08
- IXFR44N50P
- IXFR44N50Q_03
- IXFR44N60
- IXFR48N50Q
- IXFR48N60Q3
- IXFR50N50
- IXFR55N50
- IXFR58N20
- IXFR64N50P
- IXFR64N60P
- IXFR66N50Q2
- IXFR75N10Q
- IXFR80N15Q
- IXFR80N50P
- IXFR9N80Q
- IXFT10N100Q
- IXFT12N100
- IXFT12N100Q
- IXFT12N90Q
- IXFT13N80Q
- IXFT140N10P
- IXFT14N80P
- IXFT150N20T
- IXFT15N100Q
- IXFT15N80Q
- IXFT16N80P
- IXFT17N80Q
- IXFT18N90P
- IXFT20N60Q
- IXFT20N80Q
- IXFT21N50Q
- IXFT23N80Q
- IXFT24N50Q
- IXFT24N90P
- IXFT26N50Q
相关库存
更多- IXFR27N80Q
- IXFR30N50
- IXFR30N60P
- IXFR32N100Q3
- IXFR32N50Q_04
- IXFR32N80Q3
- IXFR36N50P
- IXFR38N80Q2
- IXFR40N50Q2
- IXFR40N90P
- IXFR44N50Q
- IXFR44N50Q3
- IXFR44N80P
- IXFR48N60P
- IXFR4N100Q
- IXFR52N30Q
- IXFR55N50F
- IXFR58N20Q
- IXFR64N50Q3
- IXFR64N60Q3
- IXFR70N15
- IXFR80N10Q
- IXFR80N20Q
- IXFR90N30
- IXFT10N100
- IXFT120N15P
- IXFT12N100F
- IXFT12N50F
- IXFT13N100
- IXFT13N90
- IXFT14N100
- IXFT150N17T2
- IXFT15N100
- IXFT15N100Q3
- IXFT16N120P
- IXFT16N90Q
- IXFT18N100Q3
- IXFT20N100P
- IXFT20N80P
- IXFT21N50F
- IXFT23N60Q
- IXFT24N50
- IXFT24N80P
- IXFT26N50
- IXFT26N55Q