IXFT15N100Q资料datasheet下载库存现货IXYS-114ic电子网

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IXFT15N100Q	文件：137.46 Kbytes Page：2 Pages	HiPerFET Power MOSFETs Q-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •Ea	IXYS IXYS Integrated Circuits Division	IXYS
IXFT15N100Q3	文件：134.23 Kbytes Page：5 Pages	HiperFETTM Power MOSFETs Q3-Class N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features •LowIntrinsicGateResistance •InternationalStandardPackages •LowPackageInductance •FastIntrinsicRectifier •LowRDS(on)andQG Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applic	IXYS IXYS Integrated Circuits Division	IXYS
DAM15N100B	文件：218.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
DAM15N100D	文件：233.38 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
DAM15N100S	文件：238.58 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
IXFH15N100	文件：372.25 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH15N100	文件：628.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Integrated Circuits Division	IXYS
IXFH15N100P	文件：371.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.76Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH15N100P	文件：181.5 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomo	IXYS IXYS Integrated Circuits Division	IXYS
IXFH15N100Q	文件：137.46 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •Ea	IXYS IXYS Integrated Circuits Division	IXYS
IXFH15N100Q	文件：337.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK15N100Q	文件：328.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK15N100Q	文件：137.46 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •Ea	IXYS IXYS Integrated Circuits Division	IXYS
IXFR15N100	文件：329.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFT15N100	文件：628.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Integrated Circuits Division	IXYS
IXFV15N100P	文件：181.5 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomo	IXYS IXYS Integrated Circuits Division	IXYS
IXFV15N100PS	文件：181.5 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomo	IXYS IXYS Integrated Circuits Division	IXYS
IXFX15N100	文件：116.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Integrated Circuits Division	IXYS
IXFX15N100	文件：628.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Integrated Circuits Division	IXYS
IXFX15N100	文件：367.92 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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详细参数

型号：
IXFT15N100Q
功能描述：
MOSFET 15 Amps 1000V 0.725 Rds
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	IXFT15N100Q	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市昊创电子有限公司	IXFT15N100Q	IXYS艾赛斯	1626+	TO-247	1652	代理品牌	询价
深圳兆威电子有限公司	IXFT15N100Q	IXYS/艾赛斯	23+	TO-268	90000	只做原厂渠道价格优势可提供技术支持	询价
艾睿国际（香港）有限公司	IXFT15N100Q	IXYS/艾赛斯	2021+	TO-268	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市国宇半导体科技有限公司	IXFT15N100Q	IXYS/艾赛斯	23+	TO-268	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	IXFT15N100Q	IXYS	22+	TO2683 D3Pak (2 Leads + Tab) T	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IXFT15N100Q	IXYS	21+	TO2683 D3Pak (2 Leads + Tab) T	13880	公司只售原装,支持实单	询价
易创佳业科技（深圳）有限公司	IXFT15N100Q	IXYS	23+	TO2683 D3Pak (2 Leads + Tab) T	9000	原装正品，支持实单	询价
深圳市鹏顺微电子科技有限公司	IXFT15N100Q	IXYS	2022+	TO-268-3,D3Pak(2 引线 + 接片	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市富芯乐电子科技有限公司	IXFT15N100Q	IXYS	22+	TO-268	5000	绝对全新原装现货	询价

更多IXFT15N100Q供应商更新时间2024-6-1 9:02:00

详细参数

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