首页 >IRLRU3103PBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
P-Ch30VFastSwitchingMOSFETs Description TheFKN3103isthehighcelldensitytrenched P-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuck converterapplications. TheFKN3103meettheRoHSandGreenProduct requirement,100EASguaranteedwithfull functionreliabilityapproved. | FETEKFETek Technology Corp. 台灣東沅公司 東沅科技股份有限公司 | FETEK | ||
P-Ch30VFastSwitchingMOSFETs Description TheFKS3103isthehighcelldensitytrenched P-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuck converterapplications. TheFKS3103meettheRoHSandGreenProduct requirement,100EASguaranteedwithfull functionreliabilityapproved. | FETEKFETek Technology Corp. 台灣東沅公司 東沅科技股份有限公司 | FETEK | ||
4A180KHz36VBuckDCtoDCConverter | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 莱姆电子（中国）有限公司 | LEM | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 莱姆电子（中国）有限公司 | LEM | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighPerformanceRelativeHumidityandTemperatureSensor Features •Humidityrange:0to100RH •Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) •Hydrophobicmembrane,IP67rating •14-bitresolution:0.01RH,typical •Independentprogrammableresolutionsettings:8, 10,12,14bits •FastRHresponsetime:1secondtimeconstant, | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensor Features Humidityrange:0to100RH Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) Hydrophobicmembrane,IP67rating 14-bitresolution:0.01RH,typical Independentprogrammableresolutionsettings:8, 10,12,14bits FastRHresponsetime:1secondtimeconstant, typical(w | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensorwithDigitalOutput Features ■Humidityrange:0to100RH ■Automotivegrade,AEC-Q100qualified,Grade2, -40°Cto+105°C ■Industrialgrade,JEDECqualified,-40°Cto +125°C ■DigitalI2CoutputwithCRCchecksum ■RHaccuracy:±1.5RH,typical(HS4001) ■14-bitresolution:0.04RH,typical ■Independentpro | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensorModule Applications ■Climatecontrolsystems ■Homeappliances ■Weatherstations ■Industrialautomation ■Medicalequipment Features ■Humidityrange:0to100RH ■HumiSealcoatingformoistureprotection ■Humidityaccuracy:±1.5RH,typical ■14-bitresolution:0.01RH,typical ■Indep | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Half-BridgeFredFETandIntegratedDriver Description TheIR3103isagatedriverICintegratedwithahalfbridgeFredFETdesignedformotordriveapplicationsupto180W(heatsink-less).Thesleekandcompactsingle-in-linepackageisoptimizedforelectronicmotorcontrolinapplianceapplicationssuchasfansandcompressorsforrefr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET | InterFET InterFET Corporation | InterFET | ||
PowerMOSFET(Vdds=30V,Rds(on)=12mohm,Id=64A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
IRLRU3103PBF
- 制造商：
IRF
- 制造商全称：
International Rectifier
- 功能描述：
HEXFET㈢ Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
22+ |
6000 |
终端可免费供样,支持BOM配单 |
询价 | |||
IR |
23+ |
8000 |
专注配单,只做原装进口现货 |
询价 | |||
IR |
23+ |
8000 |
只做原装现货 |
询价 | |||
IR |
20+ |
TO-263-7 |
20500 |
汽车电子原装主营-可开原型号增税票 |
询价 | ||
VISHAY-威世 |
24+25+/26+27+ |
TO-263-7 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
1415+ |
TO-263 |
28500 |
全新原装正品,优势热卖 |
询价 | ||
IR |
23+ |
D2-Pak.. |
4200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
21+ |
TO-263 |
12588 |
原装正品,自己库存 假一罚十 |
询价 |
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