首页 >IRGS10B60KDTRRP>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
600V,10AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V,10AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V,10AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
AOTF10B60D | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
FRED | NIECNihon Inter Electronics Corporation Nihon Inter Electronics Corporation | NIEC | ||
FRD-ForPowerFactorImprovementHighFrequencyRecification FEATURES *FullyMoldedIsolation *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability | NIECNihon Inter Electronics Corporation Nihon Inter Electronics Corporation | NIEC | ||
FRED | NIECNihon Inter Electronics Corporation Nihon Inter Electronics Corporation | NIEC | ||
FRED | NIECNihon Inter Electronics Corporation Nihon Inter Electronics Corporation | NIEC | ||
FORPOWERFACTORIMPROVEMENTHIGHFREQUENCYRECTIFICATION FEATURES *FullyMoldedIsolationCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability | NIECNihon Inter Electronics Corporation Nihon Inter Electronics Corporation | NIEC | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ControlIntegratedPOwerSystem | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ControlIntegratedPOwerSystem | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ControlIntegratedPOwerSystem | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
详细参数
- 型号：
IRGS10B60KDTRRP
- 功能描述：
IGBT 模块
- RoHS：
否
- 制造商：
Infineon Technologies
- 产品：
IGBT Silicon Modules
- 配置：
Dual 集电极—发射极最大电压
- VCEO：
600 V
- 集电极—射极饱和电压：
1.95 V 在25
- C的连续集电极电流：
230 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
445 W
- 最大工作温度：
+ 125 C
- 封装/箱体：
34MM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-263 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-263 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-263 |
60000 |
进口原装正品现货热卖 |
询价 | ||
Infineon(英飞凌) |
23+ |
- |
31277 |
正规渠道,大量现货,只等你来。 |
询价 | ||
INFINEON/英飞凌 |
23+ |
120000 |
只做原装全系列供应价格优势 |
询价 | |||
INFINEON/英飞凌 |
21+ |
TO-263 |
8800 |
全新、原装 |
询价 | ||
INFINEON/英飞凌 |
2024+实力库存 |
210494 |
只做原厂渠道 可追溯货源 |
询价 | |||
IR |
21+ |
TO-263 |
8000 |
原厂订货价格优势,可开13%的增值税票 |
询价 | ||
INFINEON |
19+ |
TO-263 |
8800 |
原装库存有订单来谈优势 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
7000 |
工厂现货!原装正品! |
询价 |
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