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GB10B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien

IRFInternational Rectifier

英飞凌英飞凌科技公司

AOB10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF10B60D

AOTF10B60D

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

FCF10B60

FRED

NIECNihon Inter Electronics Corporation

Nihon Inter Electronics Corporation

FCU10B60

FRD-ForPowerFactorImprovementHighFrequencyRecification

FEATURES *FullyMoldedIsolation *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability

NIECNihon Inter Electronics Corporation

Nihon Inter Electronics Corporation

FSF10B60

FRED

NIECNihon Inter Electronics Corporation

Nihon Inter Electronics Corporation

FSF10B60B

FRED

NIECNihon Inter Electronics Corporation

Nihon Inter Electronics Corporation

FSU10B60

FORPOWERFACTORIMPROVEMENTHIGHFREQUENCYRECTIFICATION

FEATURES *FullyMoldedIsolationCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability

NIECNihon Inter Electronics Corporation

Nihon Inter Electronics Corporation

IKCM10B60GA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IKCM10B60GA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IKCM10B60HA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IRGB10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-220
8000
只做原装现货
询价
ST
22+
原厂封装
50000
原厂原装现货,订货价格优势,终端BOM表可配单提供样
询价
ST
2305+
原厂封装
50000
15年芯片行业经验/只供原装正品:0755-83271531邹小姐
询价
GENESIC
24+25+/26+27+
TO-247-3
2368
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
GeneSiC Semiconductor
24+
TO-247-2
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
ST
22+
SMD3
1000
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
ST
23+
SMD3
5000
原装现货,优势热卖
询价
ST
2022+
SMD3
4600
只售进口原装公司现货!
询价
ST
2017+
TO263
35689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
更多GB10B60KD供应商 更新时间2024-5-16 14:00:00