IRFZ44规格书供应商报价英飞凌IRF第2页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFZ44EPBF	文件：147.36 Kbytes Page：8 Pages	HEXFET짰 Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFZ44ES	文件：163.26 Kbytes Page：10 Pages	Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFZ44ESPBF	文件：230.61 Kbytes Page：10 Pages	HEXFET짰 Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFZ44ESPBF	文件：239.75 Kbytes Page：11 Pages	Advanced Process Technology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFZ44ESTRLPBF	文件：239.75 Kbytes Page：11 Pages	Advanced Process Technology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFZ44L	文件：327.43 Kbytes Page：10 Pages	HEXFET Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFZ44L	文件：1.48013 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwit	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFZ44L	文件：862.02 Kbytes Page：11 Pages	Power MOSFET FEATURES •Advancedprocesstechnology •Surface-mount(IRFZ44S,SiHFZ44S) •Low-profilethrough-hole(IRFZ44L,SiHFZ44L) •175°Coperatingtemperature •Fastswitching •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 Note *Thisdatasheetp	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFZ44LPBF	文件：1.48013 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwit	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFZ44N	文件：64.28 Kbytes Page：8 Pages	N-channel enhancement mode TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
IRFZ44N	文件：100.57 Kbytes Page：8 Pages	Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFZ44N	文件：141.91 Kbytes Page：1 Pages	Power MOSFET PowerMOSFET VDSS=55V,RDS(on)=17.5mohm,ID=49A NChannel	TEL TRANSYS Electronics Limited	TEL
IRFZ44N	文件：150.35 Kbytes Page：5 Pages	N-CHANNEL Power MOSFET FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication	SUNTACSuntac Electronic Corp. Suntac Electronic Corp.	SUNTAC
IRFZ44N	文件：132.39 Kbytes Page：1 Pages	N-Channel Power MOSFET DESCRIPTION Processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomandComputerapplications.Itisalsointendedforanyapplicationswithlo	TGS Tiger Electronic Co.,Ltd	TGS
IRFZ44N	文件：121.82 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFZ44N	文件：76.78 Kbytes Page：2 Pages	N-Channel MOSFET Transistor DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
IRFZ44N	文件：154.74 Kbytes Page：5 Pages	55A 50V N CHANNEL POWER MOSFET FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication	FCI Amphenol ICC	FCI
IRFZ44N	文件：700.41 Kbytes Page：8 Pages	Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFZ44N	文件：1.79136 Mbytes Page：6 Pages	50A,60V Heatsink Planar N-Channel Power MOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
IRFZ44NL	文件：151.95 Kbytes Page：10 Pages	Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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详细参数

型号：
IRFZ44
功能描述：
MOSFET N-Chan 60V 50 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市斌能达电子科技有限公司	IRFZ44	台产大芯片	23+	TO-220	2000	全新原装深圳仓库现货有单必成	询价
深圳市勤思达科技有限公司	IRFZ44	IR	23+		1018	TO-220	询价
深圳市星佑电子有限公司	IRFZ44	SAMSUNG	05+	原厂原装	390	只做全新原装真实现货供应	询价
绿盛电子(香港)有限公司	IRFZ44	IR	2015+	TO-220	19898	专业代理原装现货,特价热卖!	询价
深圳市一线半导体有限公司	IRFZ44	IR	07+	TO-220	5000		询价
深圳市昌和盛利电子有限公司	IRFZ44	IR	23+	TO-220	9526		询价
齐创科技(上海,北京,青岛)有限公司	IRFZ44	IR	23+	TO-220	5000	原装正品,假一罚十	询价
深圳市弘为电子有限公司	IRFZ44	IR	16+	原厂封装	50	原装现货假一罚十	询价
深圳市佳鑫美电子科技有限公司	IRFZ44	IR	22+	TO-220	2560	绝对原装!现货热卖!	询价
深圳市博浩通科技有限公司	IRFZ44	IR	23+	TO-220	6000	全新原装现货	询价

更多IRFZ44供应商更新时间2024-6-12 14:40:00

详细参数

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