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52N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IIRFB52N15D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRFS52N15D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB52N15

PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB52N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB52N15D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB52N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters ●PlasmaDispla

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS52N15D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS52N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS52N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters ●PlasmaDispla

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS52N15DPBF

HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL52N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL52N15D

iscN-ChannelMOSFETTransistor

•DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤32mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFSL52N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters ●PlasmaDispla

IRFInternational Rectifier

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
IR
13+
TO-220
15000
全新原装的现货
询价
IR
23+
TO-263
65400
询价
IR
21+
D2PAK
5000
专营原装正品现货,当天发货,可开发票!
询价
Infineon英飞凌专营
TO-263
9000
原装现货当天可交货,长期备货支持BOM配单账期
询价
Infineon(英飞凌)
23+
TO-263
9448
原厂可订货,技术支持,直接渠道。可签保供合同
询价
Infineon(英飞凌)
23+
TO-263
13716
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
IR
2022
D2PAK
5880
原厂原装正品,价格超越代理
询价
IR
23+
TO-263
9980
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
IR
2017+
D2PAK
78459
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
IR
22+23+
TO-263
28562
绝对原装正品全新进口深圳现货
询价
更多IRFS52N15DTRLPBF供应商 更新时间2024-4-28 9:18:00