首页 >IRFR9N20DHR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SMPSMOSFET SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=200V,Rds(on)max=0.38ohm,Id=9.4A) SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SMPSMOSFET SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=200V,Rds(on)max=0.38ohm,Id=9.4A) SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH |
详细参数
- 型号：
IRFR9N20DHR
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
终端可免费供样,支持BOM配单 |
询价 | |||
IR |
23+ |
8000 |
只做原装现货 |
询价 | |||
IR/INFINEON |
22+21+ |
TO-252 |
6875 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
IR |
23+ |
D-Pak |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
IR/VISHAY |
22+ |
SOT-252 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
IR |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
22+ |
TO-252 |
3750 |
原装现货假一赔十 |
询价 | ||
IR |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
21+ |
D-pak |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
2022+ |
TO-252 |
79999 |
询价 |
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