| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFP254N | Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRFP254N | Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatthesePowerMOSFETsarewellknownfor,providesthedesign | VishayVishay Siliconix 威世科技 | Vishay | |
HEXFET짰 Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatthesePowerMOSFETsarewellknownfor,providesthedesign | VishayVishay Siliconix 威世科技 | Vishay | ||
FuseBlocksandClips-ForNANO2SurfaceMountFuses | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
TwoAxis,Micro-stickControllerWithOptionalMomentarySwitch | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
WILMAR??ProtectiveRelays-250Series,Over/Undervoltage | MACOM Tyco Electronics | MACOM | ||
3M??LappingFilmAluminumOxide254X | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
MultiTunerSet-TopBoxes | RFHICRFHIC RFHIC | RFHIC | ||
PRESSFITAUTOMOTIVERECTIFIER | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 | CHENYI | ||
N-Channel150V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
150VN-ChannelMOSFET GeneralDescription TheAOT254L/AOB254LusesTrenchMOSFETtechnologythatisuniquelyoptimizedtoprovidethemostefficienthighfrequencyswitchingperformance.BothconductionandswitchingpowerlossesareminimizedduetoanextremelylowcombinationofRDS(ON),CissandCoss.Thisdevice | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
150VN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
150VN-ChannelMOSFET GeneralDescription TheAOT254L/AOB254LusesTrenchMOSFETtechnologythatisuniquelyoptimizedtoprovidethemostefficienthighfrequencyswitchingperformance.BothconductionandswitchingpowerlossesareminimizedduetoanextremelylowcombinationofRDS(ON),CissandCoss.Thisdevice | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
Bothlowon-resistanceandgoodcost-performanceachieved.Measuringinstruments FEATURES 1.Widevariationof40V,60V,100V,200V,250V,400V,600V,1,000Vand1,500Vloadvoltage 2.Lowon-resistanceoftyp.0.6Ω(AQV251) 3.Reinforcedinsulationtypeof5,000VI/Oisolationavailable TYPICALAPPLICATIONS •Measuringinstruments •Datacommunicationequipment •Telep | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
HE(High-functionEconomy)Type[1-Channel(FormA)Type] FEATURES 1.Highlysensitiveandlowon-resistance 2.Controlsvarioustypesofloadssuch asrelays,motors,lampsandsolenoids. 3.Opticalcouplingforextremelyhighisolation 5,000VrmsI/Oisolationavailable. 4.Low-leveloffstateleakagecurrent 5.Eliminatestheneedforap | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS |
详细参数
- 型号：
IRFP254N
- 功能描述：
MOSFET N-Chan 250V 23 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-247 |
65400 |
询价 | |||
VISHAY/威世 |
23+/24+ |
TO-247 |
9865 |
原装MOS管(场效应管). |
询价 | ||
IR |
08+(pbfree) |
TO-247AC |
8866 |
询价 | |||
求购IC |
2016+ |
TO-247 |
5083 |
询价 | |||
IR |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
IR |
23+ |
TO-247 |
9896 |
询价 | |||
IR |
16+ |
原厂封装 |
300 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
TO-247 |
9980 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
NA |
20000 |
原装正品 |
询价 |
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