首页 >IRFD9014PBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFD9014PBF | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技 | Vishay | |
IRFD9014PBF | HEXFET짰 POWER MOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRFD9014PBF | Power MOSFET | VishayVishay Siliconix 威世科技 | Vishay | |
NPNSILICONTRANSISTOR FEATURES Powerdissipation PCM:0.4W(Tamb=25°C) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:50V | WINGSWing Shing Computer Components Wing Shing Computer Components | WINGS | ||
TO-92Plastic-EncapsulateTransistors TO-92Plastic-EncapsulateTransistors NPNsilicon | DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd. | DAYA | ||
NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups,A,B,C andD,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistorST9015is recommended. Onspecialrequest,thesetransistorscanbe | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
FairchildQFETforSynchronousRectification Introduction FairchildiscurrentlydevelopingandmarketinganewQFETseriesthathasimprovedRDS(on),gatecharge,andswitchingspeedcharacteristics.ThesuperiorfeaturesoftheseQFETsareveryusefulforincreasingtheefficiencyoflowoutputvoltagepowersupplies,makingitspecially | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNEPITAXIALSILICONTRANSISTOR PRE-AMPLIFIER,LOWLEVEL&LOWNOISE FEATURES *Hightotalpowerdissipation.(450mW) *ExcellenthFElinearity. *ComplementarytoUTC9015 | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
SiliconNPNtransistor | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SiliconNPNEpitaxialTransistor | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
NPNEPITAXIALSILICONTRANSISTOR PRE-AMPLIFIER,LOWLEVEL&LOWNOISE FEATURES *Hightotalpowerdissipation.(450mW) *ExcellenthFElinearity. *ComplementarytoUTC9015 | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
SiliconNPNtransistorinaSOT-23PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SiliconNPNtransistorinaSOT-23PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
GENERALPURPOSETRANSISTORSNPNSILICON | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
GENERALPURPOSETRANSISTORSNPNSILICON | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
GENERALPURPOSETRANSISTORSNPNSILICON | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
GENERALPURPOSETRANSISTORSNPNSILICON | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
SiliconNPNtransistorinaSOT-89PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SiliconNPNtransistorinaSOT-323PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
NPNTransistors | AMSAdvanced Monolithic Systems 艾迈斯艾迈斯半导体 | AMS |
详细参数
- 型号：
IRFD9014PBF
- 功能描述：
MOSFET P-Chan 60V 1.1 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
4-HVMDIP |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IR |
21+ |
DIP-4 |
60000 |
原装正品进口现货 |
询价 | ||
原厂原包 |
2022+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
询价 | ||
Vishay(威世) |
2249+ |
58079 |
二十余载金牌老企 研究所优秀合供单位 您的原厂窗口 |
询价 | |||
VISHAY |
30000 |
原装现货,可追溯原厂渠道 |
询价 | ||||
VISHAY(威世) |
23+ |
HVMDIP-4 |
7863 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
23+ |
1018 |
HEXDIP |
询价 | |||
IR |
23+ |
HEXDIP |
19526 |
询价 | |||
VISHAY |
23+ |
IPak |
7750 |
全新原装优势 |
询价 | ||
Vishay |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 |
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