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IRFBE30SPBF中文资料IRF数据手册PDF规格书
IRFBE30SPBF规格书详情
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
O Dynamic dv/dt Rating
O Repetitive Avalanche Rated
O Fast Switching
O Ease of Paralleling
O Simple Drive Requirements
O Lead-Free
产品属性
- 型号:
IRFBE30SPBF
- 功能描述:
MOSFET N-Chan 800V 4.1 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR/VISH |
21+ |
65230 |
询价 | ||||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
IR |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Vishay Siliconix |
24+ |
D2PAK(TO-263) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
VISHAY/威世 |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 | ||
VISHAY/威世 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISHAY(威世) |
23+ |
D2PAK(TO-263AB) |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
Vishay(威世) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
VISH |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 |