IRFBE30S中文资料PDF规格书
IRFBE30S规格书详情
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
O Dynamic dv/dt Rating
O Repetitive Avalanche Rated
O Fast Switching
O Ease of Paralleling
O Simple Drive Requirements
产品属性
- 型号:
IRFBE30S
- 功能描述:
MOSFET N-Chan 800V 4.1 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IR |
23+ |
D2-Pak |
8600 |
全新原装现货 |
询价 | ||
IR |
2023+ |
D2-PAK |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
2018+ |
TO263 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
IR(国际整流器) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
IR/VISHAY |
23+ |
TO-263 |
6000 |
原装正品,支持实单 |
询价 | ||
IR |
21+ |
TO-263 |
5587 |
原装现货库存 |
询价 | ||
AO |
23+ |
TO252 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
IR |
22+ |
D2-PAK |
8000 |
原装正品支持实单 |
询价 | ||
IR |
23+ |
TO-263 |
35890 |
询价 |