IRFBE30S中文资料PDF规格书
IRFBE30S规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
产品属性
- 型号:
IRFBE30S
- 功能描述:
MOSFET N-Chan 800V 4.1 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR/VISHAY |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IR |
2020+ |
D2-PAK |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
2018+ |
TO263 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
IR |
23+ |
TO-263 |
35890 |
询价 | |||
IR |
21+ |
TO-263 |
5587 |
原装现货库存 |
询价 | ||
IR/VISHAY |
23+ |
TO-263 |
6000 |
原装正品,支持实单 |
询价 | ||
IR |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IR |
22+ |
D2-PAK |
8000 |
原装正品支持实单 |
询价 |