IRF6646中文资料PDF规格书
IRF6646规格书详情
Description
The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
RoHS compliant containing no lead or bromide c
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible c
Ultra Low Package Inductance
Optimized for High Frequency Switching c
Ideal for High Performance Isolated Converter Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques c
产品属性
- 型号:
IRF6646
- 功能描述:
MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3280 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
24+ |
QFN |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
只做原装 |
21+ |
MOSFET |
36520 |
一级代理/放心采购 |
询价 | ||
IR |
22+ |
FQN |
8000 |
原装正品支持实单 |
询价 | ||
IR |
06+ |
SOP |
4800 |
询价 | |||
IR |
SOP |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
IR |
2022+ |
DirectFET |
8600 |
英瑞芯只做原装正品 |
询价 | ||
IR |
2022+ |
SOP |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
IR |
21+ |
QFN |
4300 |
公司现货,不止网上数量!原装正品,假一赔十! |
询价 | ||
IR |
22+ |
QFN |
32350 |
原装正品 假一罚十 公司现货 |
询价 |