IRF6645中文资料PDF规格书
IRF6645规格书详情
Description
The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
RoHs Compliant Containing No Lead and Bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
产品属性
- 型号:
IRF6645
- 功能描述:
MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
NA |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
IR/INFINEON |
22+21+ |
NA |
3646 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
IR |
2021+ |
SMD |
3500 |
十年专营原装现货,假一赔十 |
询价 | ||
IR |
24+ |
SMD |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
23+ |
N/A |
46280 |
正品授权货源可靠 |
询价 | |||
IOR |
23+ |
DIRTCF |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
Infineon Technologies |
23+ |
DirectFET? Isometric SJ |
9000 |
原装正品,支持实单 |
询价 | ||
Infineon |
23+ |
MG-WDSON-5 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
IR |
23+ |
SMD |
6500 |
专注配单,只做原装进口现货 |
询价 |