首页 >IRF1404ZSTRLPBF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
LowCost,MiniatureFiberOpticComponentswithST,SMA,SCandFCPorts Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A) Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A) Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFETHEXFET짰PowerMOSFET Description ThisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingle | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤4.0mΩ •Enhancementmode •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET-RPowerMOSFET Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET(VDSS=40V,RDS(on)=4.0m廓,ID=160A) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFET-RPowerMOSFET Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AUTOMOTIVEMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFETHEXFET짰PowerMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
详细参数
- 型号:
IRF1404ZSTRLPBF
- 功能描述:
MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-263 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
INFINEON/IR |
1907+ |
NA |
2400 |
20年老字号,原装优势长期供货 |
询价 | ||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
询价 | ||
Infineon Technologies |
24+ |
PG-TO263-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IR/VISHAY |
SOT263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
IR |
18+ |
TO263 |
9800 |
一级代理/全新原装现货/长期供应! |
询价 | ||
IR |
2019+ |
TO263 |
3470 |
原厂渠道 可含税出货 |
询价 | ||
INFINEON/英飞凌 |
20+ |
TO-263 |
5600 |
进口原装假一赔十支持含税 |
询价 | ||
IR |
21+ |
TO-263 |
7500 |
全新、原装 |
询价 | ||
IR |
2024+实力库存 |
D2-PAK |
270 |
只做原厂渠道 可追溯货源 |
询价 |
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