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HFBR1404TA

LowCost,MiniatureFiberOpticComponentswithST,SMA,SCandFCPorts

Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt

HPAgilent(Hewlett-Packard)

安捷伦科技安捷伦科技有限公司

IRFBA1404

PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1404P

PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1404PPBF

AUTOMOTIVEMOSFETHEXFET짰PowerMOSFET

Description ThisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingle

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1404PPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404

N-ChannelMOSFETTransistor

•DESCRIPTION •Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤4.0mΩ •Enhancementmode •FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRL1404

HEXFETPowerMOSFET

Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404L

HEXFET-RPowerMOSFET

Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404LPBF

HEXFET짰PowerMOSFET

Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404PBF

HEXFET짰PowerMOSFET(VDSS=40V,RDS(on)=4.0m廓,ID=160A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404PBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRL1404S

HEXFET-RPowerMOSFET

Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404SPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404SPBF

HEXFET짰PowerMOSFET

Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404SPFF

HEXFET짰PowerMOSFET

Description SeventhGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRL1404Z

AUTOMOTIVEMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404ZL

AUTOMOTIVEMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL1404ZLPBF

AUTOMOTIVEMOSFETHEXFET짰PowerMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IRF1404ZSTRLPBF

  • 功能描述:

    MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2020+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINEON/IR
1907+
NA
2400
20年老字号,原装优势长期供货
询价
INFINEON
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
询价
Infineon Technologies
24+
PG-TO263-3
30000
晶体管-分立半导体产品-原装正品
询价
IR/VISHAY
SOT263
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
IR
18+
TO263
9800
一级代理/全新原装现货/长期供应!
询价
IR
2019+
TO263
3470
原厂渠道 可含税出货
询价
INFINEON/英飞凌
20+
TO-263
5600
进口原装假一赔十支持含税
询价
IR
21+
TO-263
7500
全新、原装
询价
IR
2024+实力库存
D2-PAK
270
只做原厂渠道 可追溯货源
询价
更多IRF1404ZSTRLPBF供应商 更新时间2024-5-19 9:08:00