Information :

Samsung DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II

The K4S281632O is 134，217，728 bits synchronous high data rate Dynamic RAM

organized as 4 x 2，097，152 words by 16 bits， fabricated with SAMSUNG′s high

performance CMOS technology.

Range of operating frequencies， programmable burst length and_programmable

latencies allow the same device to be useful for a variety of high bandwidth， high

performance memory system applications.

? JEDEC standard 3.3V power supply

? RoHS compliant and_Halogen-Free package

? 133MHz (CL=3)， -40 to 85 °C