AO4294代理价格

2016-10-21 9:30:00
  • AO4294 AOS快充MOS管, 100V 11A 高效稳定快充MOS 小米快充和OPPO的快充基本都是用AO4294. AO4294价格优势,技术支持,同时提供台湾辉能微的相似替代MOS管 价格更优, 咨询电话 13828760986 赵 样品技术咨询 QQ 2677332671 General Description Product Summary VDS ID (at VGS=10V) 11.5A RDS(ON) (at VG

AO4294 AOS快充MOS管, 100V 11A 高效稳定快充MOS

小米快充和OPPO的快充基本都是用AO4294.

AO4294价格优势,技术支持,同时提供台湾辉能微的相似替代MOS管

价格更优, 咨询电话 13828760986 赵

样品技术咨询 QQ 2677332671

同时替代AO4294的有DG100N03

General Description Product Summary

VDS

ID (at VGS=10V) 11.5A

RDS(ON) (at VGS=10V) < 12mΩ

RDS(ON) (at VGS=4.5V) < 15.5mΩ

Applications 100% UIS Tested

100% Rg Tested

Symbol

V

• Synchronus Rectification in DC/DC and AC/DC Converters

• Industrial and Motor Drive applications

100

Parameter

Drain-Source Voltage

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

Maximum Units

AO4294 SO-8 Tape & Reel 3000

100V N-Channel MOSFET

Orderable Part Number Package Type Form Minimum Order Quantity

• Trench Power MV MOSFET technology 100V

• Low RDS(ON)

• Low Gate Charge

• Optimized for fast-switching applications

G

D

S

SOIC-8

Top View Bottom View

D

D

D

D

S

S

S

G

VDS

VGS

IDM

IAS

Avalanche energy L=0.1mH C EAS

VDS Spike VSPIKE

TJ

, TSTG

Symbol

t ≤ 10s

Steady-State

Steady-State RθJL

Power Dissipation B TA=70°C 2.0

10μs

PD

100

120

3.1

Gate-Source Voltage

Pulsed Drain Current C

9

Drain-Source Voltage

Continuous Drain

Current

Maximum Junction-to-Lead °C/W

Maximum Junction-to-Ambient °C/W A D

16

75

24

V

A

±20

V

Maximum Junction-to-Ambient A

°C/W RθJA

31

59

40

Parameter Max

°C

Units

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