首页 >IDT71V65603S133BQI>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IDT71V65603S133BQI | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
详细参数
- 型号：
IDT71V65603S133BQI
- 功能描述：
IC SRAM 9MBIT 133MHZ 165FBGA
- RoHS：
否
- 类别：
集成电路(IC) >> 存储器
- 系列：
-
- 标准包装：
72
- 系列：
- 格式 -
- 存储器：
RAM
- 存储器类型：
SRAM - 同步
- 存储容量：
9M（256K x 36）
- 速度：
75ns
- 接口：
并联
- 电源电压：
3.135 V ~ 3.465 V
- 工作温度：
-40°C ~ 85°C
- 封装/外壳：
100-LQFP
- 供应商设备封装：
100-TQFP（14x14）
- 包装：
托盘
- 其它名称：
71V67703S75PFGI
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
165-CABGA(13x15) |
73390 |
专业分销产品!原装正品!价格优势! |
询价 | ||
IDT |
23+ |
165BGA |
9526 |
询价 | |||
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IDT |
22+ |
165CABGA (13x15) |
9000 |
原厂渠道,现货配单 |
询价 | ||
IDT |
21+ |
165CABGA (13x15) |
13880 |
公司只售原装,支持实单 |
询价 | ||
IDT |
23+ |
165CABGA (13x15) |
9000 |
原装正品，支持实单 |
询价 | ||
IDT |
23+ |
QFP |
8000 |
全新原装现货,欢迎来电咨询 |
询价 | ||
IDT |
16+ |
TQFP |
2500 |
进口原装现货/价格优势! |
询价 | ||
IDT |
2022 |
TQFP100 |
5 |
原厂原装正品,价格超越代理 |
询价 | ||
IDT |
2006+ |
TQFP-100 |
6 |
询价 |
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