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IDT71V65603S150BG

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65603S150BGI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V65603S150BG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S150BGG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S150BGGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S150BQ

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S150BQG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S150BQGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S150BQI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S150PFG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S150PFGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT71V65603S150BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65603S150BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65603S150PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65603S150PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

详细参数

  • 型号:

    IDT71V65603S150BG

  • 功能描述:

    IC SRAM 9MBIT 150MHZ 119BGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 标准包装:

    72

  • 系列:

    - 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 同步

  • 存储容量:

    9M(256K x 36)

  • 速度:

    75ns

  • 接口:

    并联

  • 电源电压:

    3.135 V ~ 3.465 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    100-LQFP

  • 供应商设备封装:

    100-TQFP(14x14)

  • 包装:

    托盘

  • 其它名称:

    71V67703S75PFGI

供应商型号品牌批号封装库存备注价格
IDT
2020+
BGA
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IDT
2016+
BGA
6523
只做进口原装现货!或订货假一赔十!
询价
IDT
23+
119BGA
9526
询价
IDT
23+
119-PBGA(14x22)
39257
专业分销产品!原装正品!价格优势!
询价
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IDT
22+
BGA
5000
全新原装现货!自家库存!
询价
IDT
23+
BGA
8650
受权代理!全新原装现货特价热卖!
询价
只做原装
21+
BGA
36520
一级代理/放心采购
询价
IDT
23+
119-BGA
4355
原装现货
询价
原装
1922+
BGA
8900
公司原装现货特价长期供货欢迎来电咨询
询价
更多IDT71V65603S150BG供应商 更新时间2024-6-14 8:22:00