首页 >IDT71V65603S133PF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IDT71V65603S133PF | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | |
IDT71V65603S133PF | 包装:卷带(TR) 封装/外壳:100-LQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 100TQFP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
包装:卷带(TR) 封装/外壳:100-LQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 100TQFP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
包装:卷带(TR) 封装/外壳:100-LQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 100TQFP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
产品属性
- 产品编号:
IDT71V65603S133PF
- 制造商:
Renesas Electronics America Inc
- 类别:
集成电路(IC) > 存储器
- 包装:
卷带(TR)
- 存储器类型:
易失
- 存储器格式:
SRAM
- 技术:
SRAM - 同步,SDR(ZBT)
- 存储容量:
9Mb(256K x 36)
- 存储器接口:
并联
- 电压 - 供电:
3.135V ~ 3.465V
- 工作温度:
0°C ~ 70°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
100-LQFP
- 供应商器件封装:
100-TQFP(14x14)
- 描述:
IC SRAM 9MBIT PARALLEL 100TQFP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
QFP |
8000 |
全新原装现货,欢迎来电咨询 |
询价 | ||
IDT |
23+ |
100TQFP |
9526 |
询价 | |||
IDT |
16+ |
TQFP |
2500 |
进口原装现货/价格优势! |
询价 | ||
IDT |
2022 |
TQFP100 |
5 |
原厂原装正品,价格超越代理 |
询价 | ||
IDT |
2006+ |
TQFP-100 |
6 |
询价 | |||
IDT |
23+ |
100-TQFP(14x14) |
9550 |
专业分销产品!原装正品!价格优势! |
询价 | ||
IDT |
2021+ |
2094 |
只做原装假一罚十 |
询价 | |||
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IDT |
23+ |
PQFP100 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
询价 |
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