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IDT70T3519S166DR

HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT70T3519S166DRI

HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BC

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BCG

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BCG

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BCGI

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BCGI

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BCGI

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BCI

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BF

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BFG

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BFG

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BFG

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BFGI

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BFGI

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRG

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRG

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRGI

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRGI

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT70T3519S166BC

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

详细参数

  • 型号:

    IDT70T3519S166DR

  • 功能描述:

    IC SRAM 9MBIT 166MHZ 208FBGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 标准包装:

    3,000

  • 系列:

    - 格式 -

  • 存储器:

    EEPROMs - 串行

  • 存储器类型:

    EEPROM

  • 存储容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 线串口

  • 电源电压:

    1.7 V ~ 5.5 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    8-SOIC(0.154,3.90mm 宽)

  • 供应商设备封装:

    8-SOIC

  • 包装:

    带卷(TR)

供应商型号品牌批号封装库存备注价格
IDT
23+
208-PQFP(28x28)
39257
专业分销产品!原装正品!价格优势!
询价
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IDT
23+
208FBGA
7616
原装现货
询价
IDT
22+
208PQFP
9000
原厂渠道,现货配单
询价
IDT
21+
208PQFP
13880
公司只售原装,支持实单
询价
IDT
23+
208PQFP
9000
原装正品,支持实单
询价
IDT
1725+
BGA
6528
只做原装正品现货!或订货假一赔十!
询价
IDT
23+
BGA
30000
原装现货,假一赔十.
询价
IDT
2309+
BGA
8293
原装现货!随时可以看货!天天特价!
询价
IDT
2023+环保现货
QFP
4425
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
更多IDT70T3519S166DR供应商 更新时间2024-5-16 9:03:00