首页 >70T3519S166BC>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
70T3519S166BC | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
70T3519S166BC | 包装:托盘 封装/外壳:256-LBGA 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 256CABGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
包装:托盘 封装/外壳:256-LBGA 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 256CABGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
包装:托盘 封装/外壳:256-LBGA 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 256CABGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
产品属性
- 产品编号:
70T3519S166BC
- 制造商:
Renesas Electronics America Inc
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
SRAM
- 技术:
SRAM - 双端口,同步
- 存储容量:
9Mb(256K x 36)
- 存储器接口:
并联
- 电压 - 供电:
2.4V ~ 2.6V
- 工作温度:
0°C ~ 70°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
256-LBGA
- 供应商器件封装:
256-CABGA(17x17)
- 描述:
IC SRAM 9MBIT PARALLEL 256CABGA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS(瑞萨) |
23+ |
256-CABGA (17.00L X 17.00W X 1 |
60 |
全新、原装 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
208-LFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
256-CABGA(17x17) |
56200 |
一级代理/放心采购 |
询价 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
IDT |
20+ |
BGA-256 |
12 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Renesas Electronics America In |
21+ |
NA |
11200 |
正品专卖,进口原装深圳现货 |
询价 | ||
Renesas |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Integrated Device Technology |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Renesas Electronics America In |
22+/23+ |
256-CABGA(17x17) |
7500 |
原装进口公司现货假一赔百 |
询价 |
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