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4S60

Materialspecification

FERROXCUBEFERROXCUBE INC.

飞磁

AOB4S60

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOB4S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB4S60

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB4S60

600V4AaMOSPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB4S60L

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB4S60L

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOD4S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI4S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT4S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT4S60

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT4S60

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOT4S60

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF4S60

600V4AaMOSPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF4S60

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF4S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOU4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOU4S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
VB
2019
TO-251A
55000
绝对原装正品假一罚十!
询价
A
23+
TO-251
10000
公司只做原装正品
询价
A
22+
TO-251
6000
十年配单,只做原装
询价
AO/万代
TO-251A
68900
原包原标签100%进口原装常备现货!
询价
A
23+
TO-251
6000
原装正品,支持实单
询价
A
23+
TO-251
8400
专注配单,只做原装进口现货
询价
VBSEMI
19+
TO-251A
29600
绝对原装现货,价格优势!
询价
A
23+
TO-251
8400
专注配单,只做原装进口现货
询价
CTCCERATECHCORPORATIONMADEINKO
HB1H3216500JT3KP50OHM1100KMHZ
102000
全新原装现货 样品可售
询价
INTERSIL
22+
SMD8
7092
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
更多I4S60供应商 更新时间2024-6-15 11:30:00