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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HGTP12N60A4	文件：229.61 Kbytes Page：8 Pages	600V, SMPS Series N-Channel IGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTP12N60A4	文件：115.04 Kbytes Page：10 Pages	600V, SMPS Series N-Channel IGBT TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTP12N60A4	文件：100 bytes Page：1 Pages	包装：管件封装/外壳：TO-220-3 类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 54A 167W TO220AB	ONSEMION Semiconductor 安森美半导体安森美半导体公司
HGTP12N60A4D	文件：173.18 Kbytes Page：8 Pages	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTP12N60A4D	文件：394.53 Kbytes Page：8 Pages	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTP12N60A4D	文件：100 bytes Page：1 Pages	包装：管件封装/外壳：TO-220-3 类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 54A TO220-3	ONSEMION Semiconductor 安森美半导体安森美半导体公司
12N60A4	文件：229.61 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
12N60A4D	文件：394.53 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
12N60A4D	文件：173.18 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTG12N60A4	文件：115.04 Kbytes Page：10 Pages	600V,SMPSSeriesN-ChannelIGBT TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTG12N60A4	文件：229.61 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTG12N60A4D	文件：173.18 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTG12N60A4D	文件：394.53 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社

产品属性

产品编号：
HGTP12N60A4
制造商：
onsemi
类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
包装：
管件
不同 Vge、Ic 时 Vce(on)（最大值）：
2.7V @ 15V，12A
开关能量：
55µJ（开），50µJ（关）
输入类型：
标准
25°C 时 Td（开/关）值：
17ns/96ns
测试条件：
390V，12A，10 欧姆，15V
工作温度：
-55°C ~ 150°C（TJ）
安装类型：
通孔
封装/外壳：
TO-220-3
供应商器件封装：
TO-220-3
描述：
IGBT 600V 54A 167W TO220AB

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	HGTP12N60A4	FAIRCHIL	08+(pbfree)	TO-220	8866		询价
深圳市昌和盛利电子有限公司	HGTP12N60A4	FAIRCHILD	23+	TO-220	9526		询价
深圳市星佑电子有限公司	HGTP12N60A4	仙童	06+	TO-220	5000	原装库存	询价
深圳市永贝尔科技有限公司	HGTP12N60A4	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市百视威讯电子科技有限公司	HGTP12N60A4		23+	N/A	45980	正品授权货源可靠	询价
深圳市芯祺盛科技有限公司	HGTP12N60A4	仙童	1746+	TO220	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳市赛尔通科技有限公司	HGTP12N60A4	FAI	23+		65480		询价
深圳市宏捷佳电子科技有限公司	HGTP12N60A4	FAIRCHIL	23+	TO-TO-220	12300	全新原装真实库存含13点增值税票!	询价
深圳市纳艾斯科技有限公司	HGTP12N60A4	FAIRCHI	2020+	TO-220	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市维尔达电子有限公司	HGTP12N60A4	仙童/INTERSI	2023+	TO-220	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价

更多HGTP12N60A4供应商更新时间2024-4-27 16:30:00

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