零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
H06N60 | N-Channel Power Field Effect Transistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC | |
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
PowerfiledEffectTransistor FEATURES ◆RobustHighVoltageTermination ◆AvalancheEnergySpecified ◆Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ◆DiodeisCharacterizedforUseinBridgeCircuits ◆IDSSandVDS(on)SpecifiedatElevatedTemperature | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
POWERFIELDEFFECTTRANSISTOR GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic | CHAMPChampion Microelectronic Corp. 虹冠虹冠电子 | CHAMP | ||
POWERFIELDEFFECTTRANSISTOR | CHAMPChampion Microelectronic Corp. 虹冠虹冠电子 | CHAMP | ||
POWERFIELDEFFECTTRANSISTOR | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 |
详细参数
- 型号:
H06N60
- 制造商:
HSMC
- 制造商全称:
HSMC
- 功能描述:
N-Channel Power Field Effect Transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
90350 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO- |
55000 |
绝对原装正品假一罚十! |
询价 | ||
INFINEON/英飞凌 |
22+ |
SOT-263 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
H |
23+ |
TO- |
10000 |
公司只做原装正品 |
询价 | ||
H |
22+ |
TO- |
6000 |
十年配单,只做原装 |
询价 | ||
H |
23+ |
TO- |
6000 |
原装正品,支持实单 |
询价 | ||
INFINEON/英飞凌 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
H |
22+ |
TO- |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VBSEMI |
19+ |
TO- |
29600 |
绝对原装现货,价格优势! |
询价 | ||
H |
24+ |
TO- |
12300 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 |
相关规格书
更多- H06P
- H07 BQ-F 2 X 2.5
- H07 BQ-F 3G 2.5
- H07 BQ-F 4G 2.5
- H07 BQ-F 5G 2.5
- H0709
- H072E11
- H0-75
- H0751
- H0754
- H07N60
- H07N60F
- H07NND3H2U3G100
- H07NRD3H2U3G100
- H07NTD3H2U3G100
- H07NVD3H2U3G100
- H08A10PT
- H08A15
- H08A15PT
- H08A20
- H08A20PT
- H08A30
- H08A40
- H08A50
- H08A60
- H08C
- H-09-010-BK
- H0911
- H099E31
- H0D088-344TGSC-Y
- H0F1225L12HHBB
- H0PPH-1006G
- H0PPH-1018G
- H0PPH-1036G
- H0PPH-1406G
- H0PPH-1418G
- H-1
- H1 BP130W
- H1 BP70W/24V
- H1,5/14
- H1.5/14D BLACK BD
- H1.5X2LG6
- H-10
- H100
- H100 1/2
相关库存
更多- H07 BQ-F 2 X 1.5
- H07 BQ-F 3G 1.5
- H07 BQ-F 4G 1.5
- H07 BQ-F 5G 1.5
- H07039032
- H070E12
- H075
- H075/14
- H0751M1
- H07541
- H07N60E
- H07N65
- H07NND3HU3G100
- H07NRD3HU3G100
- H07NTD3HU3G100
- H07NVD3HU3G100
- H08A15
- H08A15PT
- H08A20
- H08A20PT
- H08A30
- H08A30PT
- H08A40PT
- H08A50PT
- H08A60PT
- H08N02CTS
- H090E31
- H09480062CPCD8
- H0A327200064
- H0D720400003
- H0H400400007
- H0PPH-1006M
- H0PPH-1018M
- H0PPH-1036M
- H0PPH-1406M
- H0PPH-1418M
- H1-
- H1 BP55W
- H1,0/14
- H1.0/14D RED BD
- H1.5X2BL6
- H10
- H10/14
- H-100
- H100 3/8