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NP60N04ILF

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP60N04HLFandNP60N04ILFareN-channel MOSFieldEffectTransistorsdesignedforhighcurrent switchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04KUG

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04KUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP60N04MUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP60N04MUG

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04MUK

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04MUK

MOSFIELDEFFECTTRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=4.3mMAX.(VGS=10V,ID=30A) •LowCiss:Ciss=2450pFTYP.(VDS=25V) •Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04MUK

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

NP60N04MUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP60N04NUK

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04PDK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.95mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04VDK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.85mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedf

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04VLK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04VLK

N-channelPowerMOSFET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04VUK

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP60N04VUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP60N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.85mΩMAX.(VGS=10V,ID=30A) •LowCiss:Ciss=2450pFTYP.(VDS=25V) •Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

PJD60N04

40VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PJD60N04-AU

40VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

PANJITPANJIT International Inc.

强茂強茂股份有限公司

SPR60N04-C

N-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SW60N04V

N-channelEnhancedmodeDFN5*6MOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

供应商型号品牌批号封装库存备注价格
GTM-勤益
24+25+/26+27+
TO-251-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
宏微
23+
MODULE
7300
专注配单,只做原装进口现货
询价
宏微
23+
MODULE
7300
专注配单,只做原装进口现货
询价
25
全新原装 货期两周
询价
2022+
21
全新原装 货期两周
询价
GTM
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
SEMTENS
23+
SOP8
209
询价
Fluro
22+
460000
原装现货 支持实单
询价
KYCON
23+
NA
5936
专做原装正品,假一罚百!
询价
KYCON
2023+
SMD
4950
安罗世纪电子只做原装正品货
询价
更多GIS60N04供应商 更新时间2024-6-19 16:16:00