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FQU12P10

100V P-Channel MOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU12P10

100V P-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

12P10

100VP-CHANNELMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

12P10

9.4A,100VP-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

12P10

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

12P10G-TMS-T

P-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

12P10G-TND-R

P-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

12P10L-TMS-T

P-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

12P10L-TND-R

P-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

A12P10

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

滨特尔滨特尔集团

A12P10AL

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

滨特尔滨特尔集团

A12P10C

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

滨特尔滨特尔集团

A12P10G

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

滨特尔滨特尔集团

A12P10SS

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

滨特尔滨特尔集团

CEB12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-11A,RDS(ON)=315mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-9A,RDS(ON)=315mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-11A,RDS(ON)=315mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

详细参数

  • 型号:

    FQU12P10

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAICHILD
1415+
TO-251
28500
全新原装正品,优势热卖
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD/仙童
21+
TO-251
30000
只做正品原装现货
询价
FSC
2023+
TO-251
5800
进口原装,现货热卖
询价
FAIRCHILD/仙童
21+ROHS
TO251
77896
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FAIRCHIL
08+(pbfree)
TO-251
8866
询价
仙童
06+
TO-251
5000
原装
询价
FAIRCHI
23+
TO-251
8560
受权代理!全新原装现货特价热卖!
询价
VB
2019
TO-251
55000
绝对原装正品假一罚十!
询价
23+
T0-251
65480
询价
更多FQU12P10供应商 更新时间2024-6-15 11:03:00