首页 >FQU45N03LTU>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelLogicLevelPWMOptimizedPowerMOSFET GeneralDescription ThisdeviceemploysanewadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowonresistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. F | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-ChannelEnhancement-ModeMOSFET(25V,45A) Features •RDS(on)=15mΩ@VGS=10V,ID=25A •RDS(on)=20mΩ@VGS=4.5V,ID=25A •Advancedtrenchprocesstechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent •ImprovedShoo | HSMC 华昕 | HSMC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHB45N03LTissuppl | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticsuitableforsurfacemountingenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP45N03LTissuppl | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips |
详细参数
- 型号:
FQU45N03LTU
- 功能描述:
MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
I-PAKTO-251 |
24190 |
原装正品代理渠道价格优势 |
询价 | ||
FAIRCHILD/仙童 |
21+ |
I-PAKTO-251 |
30000 |
优势供应 实单必成 可13点增值税 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
I-PAKTO-251 |
18000 |
原装正品 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
I-PAKTO-251 |
6000 |
公司十几年如一日,只做原装正品,优势渠道保证每一片 |
询价 | ||
FAIRCHILD |
08+(pbfree) |
TO-251 |
8866 |
询价 | |||
仙童 |
06+ |
TO-251 |
5000 |
原装 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
VB |
2019 |
TO-251 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
FAIRC |
2020+ |
TO-251(IPAK) |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 |
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