首页 >FQP6N80CMOSFETIGBTIC>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SimpleDriveRequirements | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
6A,800VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelEnhancementMode StandardPowerMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance( | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
6.0Amps,800VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC6N80isaN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulse | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelQFETMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelQFET짰MOSFET800V,5.5A,2.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
800VN-ChannelMOSFET | Good-Ark Good-Ark | Good-Ark | ||
AdvancedPowerMOSFET(220V,2.0OHM,4.5A) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedMOSFETprocesstechnology | SILIKRONSilikron Semiconductor Co.,LTD. Silikron Semiconductor Co.,LTD. | SILIKRON | ||
800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Ultralowgatecharge Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
AdvancedMOSFETprocesstechnology | SILIKRONSilikron Semiconductor Co.,LTD. Silikron Semiconductor Co.,LTD. | SILIKRON | ||
N-ChannelQFETMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6.3A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.8A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.95Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
NA/ |
37 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
90000 |
只做原装 全系列供应 价格优势 可开增票 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO220 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
FAIRCHILD/仙童 |
TO-220 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
FAIRCHILD/仙童 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-220 |
195 |
原装现货假一赔十 |
询价 | ||
FAIRCHILD/仙童 |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
FAIRCHILD/仙童 |
2122+ |
TO220 |
19990 |
全新原装正品现货,优势渠道可含税,假一赔十 |
询价 | ||
ON/安森美 |
2022+ |
SMD |
1000 |
询价 | |||
FAIRCHILD/仙童 |
2023+ |
TO220 |
13 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 |
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