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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
50N05E	文件：224.09 Kbytes Page：6 Pages	TMOSIVPOWERFIELDEFFECTTRANSISTORS	MotorolaMotorola, Inc 摩托罗拉	Motorola
MTH50N05E	文件：293.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MTM50N05	文件：224.09 Kbytes Page：6 Pages	TMOSIVPOWERFIELDEFFECTTRANSISTORS	MotorolaMotorola, Inc 摩托罗拉	Motorola
MTM50N05E	文件：224.09 Kbytes Page：6 Pages	TMOSIVPOWERFIELDEFFECTTRANSISTORS	MotorolaMotorola, Inc 摩托罗拉	Motorola
MTP50N05E	文件：295.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MTP50N05EL	文件：979.64 Kbytes Page：7 Pages	N-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
OM50N05SA	文件：215.37 Kbytes Page：6 Pages	LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
OM50N05ST	文件：215.37 Kbytes Page：6 Pages	LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
RFG50N05	文件：47.34 Kbytes Page：6 Pages	50A,50V,0.022Ohm,N-ChannelPowerMOSFETs TheseareN-ChannelpowerMOSFET’SmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingr	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
RFG50N05L	文件：376.7 Kbytes Page：6 Pages	50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFG50N05L	文件：51.8 Kbytes Page：6 Pages	50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
RFP50N05	文件：47.34 Kbytes Page：6 Pages	50A,50V,0.022Ohm,N-ChannelPowerMOSFETs TheseareN-ChannelpowerMOSFET’SmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingr	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
RFP50N05L	文件：376.7 Kbytes Page：6 Pages	50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFP50N05L	文件：51.8 Kbytes Page：6 Pages	50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
UTT50N05	文件：135.33 Kbytes Page：3 Pages	50A,50VN-CHANNELENHANCEMENTMODEPOWERMOSFETTRANSISTOR DESCRIPTION TheUTCUTT50N05isanN-channelenhancementpowerMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),highswitchingspeed,highcurrentcapacityandlowgatecharge. TheUTCUTT50N05issuitableformotorcontrol,AC-DCorDC-DCconvertersandaudi	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	FQP50N05	FSC	04+	原厂原装	20030	全新原装绝对有货	询价
深圳市旺财半导体有限公司	FQP50N05	FSC	23+	SOP/DIP	11400	正品原装货价格低qq:2987726803	询价
深圳市力通伟业半导体有限公司	FQP50N06	FAIRCHIL	13+	TO-220	1000	特价热销现货库存	询价
深圳市勤思达科技有限公司	FQP50N06	FAIRCHILD	1215+	TO-220	150000	全新原装,绝对正品,公司大量现货供应.	询价
深圳市莱克讯科技有限公司	FQP50N06	FAI	2017+	TO220	52145	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
绿盛电子(香港)有限公司	FQP50N06	FSC	2015+	TO220	19898	专业代理原装现货,特价热卖!	询价
深圳市向鸿伟业电子有限公司	FQP50N06	求购IC	2016+	TO-220	5083		询价
深圳市毅创腾电子科技有限公司	FQP50N06	FAIRCHIL		TO-220	1000	原装长期供货!	询价
深圳市昌和盛利电子有限公司	FQP50N06	FAIRCHIL	23+	TO-220	9526		询价
深圳市科恒伟业电子有限公司	FQP50N06	FAIRCHILD	2016+	TO-220	6528	房间原装进口现货假一赔十	询价

更多FQP50N05供应商更新时间2024-4-30 10:48:00

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