| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
OM50N05ST | LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
TMOSIVPOWERFIELDEFFECTTRANSISTORS | MotorolaMotorola, Inc 摩托罗拉 |  | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
TMOSIVPOWERFIELDEFFECTTRANSISTORS | MotorolaMotorola, Inc 摩托罗拉 | | ||
TMOSIVPOWERFIELDEFFECTTRANSISTORS | MotorolaMotorola, Inc 摩托罗拉 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | ||
LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
50A,50V,0.022Ohm,N-ChannelPowerMOSFETs TheseareN-ChannelpowerMOSFET’SmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingr | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | ||
50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
50A,50V,0.022Ohm,N-ChannelPowerMOSFETs TheseareN-ChannelpowerMOSFET’SmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingr | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
50A,50VN-CHANNELENHANCEMENTMODEPOWERMOSFETTRANSISTOR DESCRIPTION TheUTCUTT50N05isanN-channelenhancementpowerMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),highswitchingspeed,highcurrentcapacityandlowgatecharge. TheUTCUTT50N05issuitableformotorcontrol,AC-DCorDC-DCconvertersandaudi | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  |
详细参数
- 型号：
OM50N05ST
- 制造商：
IRF
- 制造商全称：
International Rectifier
- 功能描述：
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
PHI |
23+ |
SOP |
3600 |
绝对全新原装!现货!特价!请放心订购! |
询价 | ||
PHI |
22+ |
SOP |
6980 |
原装现货,可开13%税票 |
询价 | ||
PHI |
23+ |
SOP |
4500 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
OHMITE |
24+25+/26+27+ |
车规-碳膜电阻 |
76052 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
PHILIPS |
41 |
询价 | |||||
PHILIPS |
23+ |
SOP28 |
9800 |
现货库存,全新原装,特价销售 |
询价 | ||
PHIL |
2016+ |
DIP |
6528 |
只做进口原装现货!假一赔十! |
询价 | ||
PHI |
2017+ |
DIP |
52145 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
PHILIPS |
2022+ |
DIP |
5000 |
全现原装公司现货 |
询价 |
相关规格书
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