FQI13N06LTU数据手册原装现货仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB13N06	文件：672.55 Kbytes Page：9 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N06	文件：659.99 Kbytes Page：10 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N06	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFETMOSFET60V,10A,140m	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N06	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFET짰MOSFET60V,10A,140m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N06	文件：305.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD13N06L	文件：787.87 Kbytes Page：6 Pages	60VN-ChannelMOSFET Features ID=5.5A LowGateCharge(Typ.4.8nC) LowCrss(Typ.17pF) LowLevelGateDriveRequirementsAllowing DirectOperationformLogicDrivers VDS=60V RDS(ON)(atVGS=10V)	UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?)	UMW
FQD13N06L	文件：653.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N06L	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET60V,11A,115m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N06L	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N06LTM	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET60V,11A,115m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N06LTM	文件：787.87 Kbytes Page：6 Pages	60VN-ChannelMOSFET Features ID=5.5A LowGateCharge(Typ.4.8nC) LowCrss(Typ.17pF) LowLevelGateDriveRequirementsAllowing DirectOperationformLogicDrivers VDS=60V RDS(ON)(atVGS=10V)	UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?)	UMW
FQD13N06LTM	文件：635.45 Kbytes Page：5 Pages	N-channelEnhancementModePowerMOSFET Features VDS=60V,ID=50A RDS(ON)	BychipBYCHIP ELECTRONICS CO,. LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQD13N06TF	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFETMOSFET60V,10A,140m	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N06TM	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFET짰MOSFET60V,10A,140m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI13N06	文件：672.55 Kbytes Page：9 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP13N06	文件：664.65 Kbytes Page：8 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP13N06	文件：302.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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详细参数

型号：
FQI13N06LTU
功能描述：
MOSFET 60V N-Channel QFET Logic Level
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	FQI13N06LTU	onsemi(安森美)	23+	I2PAK(TO-262)	7828	支持大陆交货,美金交易。原装现货库存。	询价
深圳市鼎盛源芯科技有限公司	FQI13N06LTU	harris	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳市正迈科技有限公司	FQI13N06LTU	FSC/ON	23+	原包装原封 □□	2955	原装进口特价供应 QQ 1304306553 更多详细咨询库存	询价
深圳市百诺芯科技有限公司	FQI13N06LTU	FAIRCHILD/仙童	23+	I2-PAKTO-262	24190	原装正品代理渠道价格优势	询价
深圳市河锋鑫科技有限公司	FQI13N06LTU	Fairchild/ON	22+	TO2623 Long Leads I2Pak TO262A	9000	原厂渠道,现货配单	询价
深圳市瑞卓芯科技有限公司	FQI13N06LTU	FAIRCHILD/仙童	22+	I2-PAKTO-262	18000	原装正品	询价
深圳市鹏顺微电子科技有限公司	FQI13N06LTU	ON Semiconductor	2022+	TO-262-3,长引线,I2Pak,TO-26	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市旺财半导体有限公司	FQI13N06LTU	Fairchild	23+		33500		询价
深圳市华集芯实业有限公司	FQI13N06LTU	FAIRCHILD/仙童	23+	I2-PAKTO-262	6000	公司十几年如一日,只做原装正品,优势渠道保证每一片	询价
深圳市创新迹电子有限公司	FQI13N06LTU	Fairchild仙童	22+	I2PAK	25000	只做原装进口现货,专注配单	询价

更多FQI13N06LTU供应商更新时间2024-6-14 15:14:00

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