| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFET600V,11A,0.55(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
POWERMOSFETINHERMETICISOLATED DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
11A600VSingleN-ChannelPowerMOSFET | PFCPFC Device Inc. PFC | PFC | ||
11A600VSingleN-ChannelPowerMOSFET | PFCPFC Device Inc. PFC | PFC | ||
ESeriesPowerMOSFET FEATURES •Fullylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:fordefinit | VishayVishay Siliconix 威世科技 | Vishay | ||
Reducedswitchingandconductionlosses | VishayVishay Siliconix 威世科技 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技 | Vishay | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •QualifiedaccordingtoJEDEC0)fortargetapplication | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
FMI11N60E
- 制造商：
FUJI
- 制造商全称：
Fuji Electric
- 功能描述：
N-CHANNEL SILICON POWER MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
38460 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
C |
23+ |
T-PACK(L) |
10000 |
公司只做原装正品 |
询价 | ||
FUJI |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
isc |
2024 |
I2PAK/TO-262 |
5000 |
国产品牌isc,可替代原装 |
询价 | ||
CET |
24+25+/26+27+ |
T-PACKL |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VBSEMI |
19+ |
TO263 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
FUJI/富士电机 |
23+ |
N/A |
11550 |
FUJI/富士电机系列在售 |
询价 | ||
F |
T-PACK(L) |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
F |
22+ |
T-PACK(L) |
25000 |
只做原装进口现货,专注配单 |
询价 |
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相关库存
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- FM-J-U-76-5
- FMK1G
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- FMK2
- FMK2G
- FMK2G-15S-3360
- FMK2G-K670
- FMK2GL-K201
- FMK3
- FMK3G-25P-3360
- FMK3G-K201
- FMK3-K368
- FMK4G
- FMK4G-37S-3360
- FMK5G
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- FML0240L
- FML0520L
- FML0530L
- FML0540L
- FML0H333ZF
- FML10
- FML-12
- FML120B
