FMI11N60E资料datasheet下载原装现货第2页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
DAM11N60B	文件：230.08 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
DAM11N60D	文件：234.11 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
FCB11N60	文件：332.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCB11N60	文件：977 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCB11N60	文件：582.03 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCB11N60	文件：976.05 Kbytes Page：8 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCB11N60F	文件：1.00473 Mbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCB11N60F	文件：332.6 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCB11N60FTM	文件：1.00473 Mbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCB11N60TM	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCB11N60TM	文件：977 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCI11N60	文件：581.16 Kbytes Page：8 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCI11N60	文件：974.53 Kbytes Page：8 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP11N60	文件：620.41 Kbytes Page：17 Pages	PFCPWMCombinationController Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP11N60	文件：682.46 Kbytes Page：15 Pages	PowerFactorCorrectionConverterDesign	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP11N60	文件：810.42 Kbytes Page：10 Pages	SuperFET GeneralDescription SuperFET™isanewgenerationofhighvoltageMOSFETsfromFairchildwithoutstandinglowon-resistanceandlowgatechargeperformance,aresultofproprietarytechnologyutilizingadvancedchargebalancemechanisms.Thisadvancedtechnologyhasbeentailoredtominimizecond	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP11N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP11N60F	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP11N60F	文件：836.71 Kbytes Page：10 Pages	600VN-ChannelMOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP11N60F	文件：332.17 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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详细参数

型号：
FMI11N60E
制造商：
FUJI
制造商全称：
Fuji Electric
功能描述：
N-CHANNEL SILICON POWER MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	FMI11N60E		23+	N/A	38460	正品授权货源可靠	询价
深圳兆威电子有限公司	FMI11N60E	VB	2019	TO263	55000	绝对原装正品假一罚十!	询价
深圳市国宇半导体科技有限公司	FMI11N60E	C	23+	T-PACK(L)	10000	公司只做原装正品	询价
深圳市赛美科科技有限公司	FMI11N60E	FUJI		原厂封装	1000	一级代理原装正品假一罚十价格优势长期供货	询价
无锡固电半导体股份有限公司	FMI11N60E	isc	2024	I2PAK/TO-262	5000	国产品牌isc,可替代原装	询价
深圳市惊羽科技有限公司	FMI11N60E	CET	24+25+/26+27+	T-PACKL	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市九方航科技有限公司	FMI11N60E	VBSEMI	19+	TO263	29600	绝对原装现货,价格优势!	询价
深圳市星辰微电科技有限公司	FMI11N60E	FUJI/富士电机	23+	N/A	11550	FUJI/富士电机系列在售	询价
深圳市河锋鑫科技有限公司	FMI12N50E	F	T-PACK(L)	22+	6000	十年配单,只做原装	询价
深圳市创新迹电子有限公司	FMI12N50E	F	22+	T-PACK(L)	25000	只做原装进口现货,专注配单	询价

更多FMI11N60E供应商更新时间2024-5-16 11:36:00

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