| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FMI05N60E | N-CHANNEL SILICON POWER MOSFET | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | |
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
BIDD05N60TInsulatedGateBipolarTransistor(IGBT) Features 600V,5A,LowVCE(sat) Trench-GateField-Stoptechnology Optimizedforconduction Robust RoHScompliant* Applications Switch-ModePowerSupplies(SMPS) UninterruptiblePowerSources(UPS) PowerFactorCorrection(PFC) | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
N-ChannelPowerMOSFET | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelPowerMOSFET | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-CHANNELPOWERMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelDepletion-ModeMOSFET | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=5.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applicati | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji |
详细参数
- 型号：
FMI05N60E
- 制造商：
FUJI
- 制造商全称：
Fuji Electric
- 功能描述：
N-CHANNEL SILICON POWER MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
59210 |
正品授权货源可靠 |
询价 | |||
FUJITSU/富士通 |
23+ |
T-PACK(L) |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
F |
23+ |
T-PACK(L) |
10000 |
公司只做原装正品 |
询价 | ||
F |
22+ |
T-PACK(L) |
6000 |
十年配单,只做原装 |
询价 | ||
FUJI |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
isc |
2024 |
I2PAK/TO-262 |
1500 |
国产品牌isc,可替代原装 |
询价 | ||
F |
22+ |
T-PACK(L) |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ON-安森美 |
24+25+/26+27+ |
T-PACKL |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
FUJI/富士电机 |
23+ |
N/A |
11550 |
FUJI/富士电机系列在售 |
询价 | ||
FUJI/富士电机 |
21+ROHS |
TO262 |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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