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IRF530NLPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530NLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530NPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530NPBF

HEXFET짰PowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530NPBF

N-Channel100-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF530NS

N-Channel100-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF530NS

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF530NS

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530NS

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF530NS

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530NSPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530NSPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530NSTRLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530NSTRRPBF

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530PBF

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF530PBF

Dynamicdv/dtRating,FastSwitching,EaseofParalleling,SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半导体

IRF530R

N-ChannelPowerMOSFETsAvalancheEnergyRated

HARRIS

HARRIS corporation

IRF530S

PowerMOSFET(Vdss=100V,Rds(on)=0.16ohm,Id=14A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF530S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •Availablein

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    FM530L

  • 制造商:

    RECTRON

  • 制造商全称:

    Rectron Semiconductor

  • 功能描述:

    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 5.0 Ampere

供应商型号品牌批号封装库存备注价格
RECTRON
23+
SMCDO-214AB
7600
专注配单,只做原装进口现货
询价
RECTRON
23+
SMCDO-214AB
7600
专注配单,只做原装进口现货
询价
RECTRON
16+
SMCL
56000
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
询价
RECTRON
20+
SMCL
36800
原装优势主营型号-可开原型号增税票
询价
RECTRON
24+
SMCL
56000
原装现货假一赔十
询价
RECTRON
22+
SMCL
354000
询价
RECTRON
2019+PB
SMCL
56000
全新-特价大量供货房间
询价
FM530L-W
2019+PB
SMCL
56000
询价
RECTRON
22+
56000
询价
RECTRON
新年份
SMCL
56000
原装正品大量现货,要多可发货,实单带接受价来谈!
询价
更多FM530L供应商 更新时间2024-6-18 9:30:00