IRF530NS中文资料PDF规格书
IRF530NS规格书详情
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号:
IRF530NS
- 功能描述:
MOSFET N-CH 100V 17A D2PAK
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO263 |
3500 |
全新原装假一赔十 |
询价 | ||
IR |
2020+ |
TO263-3 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
21+ |
TO-263 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
24+ |
TO263 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
Infineon |
23+ |
D2PAK |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
IR |
2016+ |
TO-263 |
5254 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
20+/21+ |
PLCC |
5600 |
全新原装进口价格优惠 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
TO-263 |
2500 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
IR |
23+ |
TO-263 |
3240 |
绝对现货库存 |
询价 | ||
IR |
22+ |
TO-263 |
4500 |
全新原装品牌专营 |
询价 |