IRF530L中文资料PDF规格书
IRF530L规格书详情
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
产品属性
- 型号:
IRF530L
- 功能描述:
MOSFET N-CH 100V 14A TO-262
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
-
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERNATIONA |
05+ |
原厂原装 |
5466 |
只做全新原装真实现货供应 |
询价 | ||
Vishay Siliconix |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
询价 | ||
INTERNATIONA |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
IR |
23+ |
TO-262 |
35890 |
询价 | |||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
TO263 |
198589 |
假一罚十原包原标签常备现货! |
询价 | |||
IR |
22+ |
TO-263 |
4500 |
全新原装品牌专营 |
询价 | ||
Vishay Siliconix |
2022+ |
TO-262-3,长引线,I2Pak,TO-26 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IR |
23+ |
TO263 |
8000 |
只做原装现货 |
询价 | ||
IR |
2018+ |
TO262 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 |