首页 >FGAF20N60SMD>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FGAF20N60SMD | 600 V, 20 A Field Stop IGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’snewseriesoffieldstop2ndgenerationIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •MaximumJunctionTemperatu | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FGAF20N60SMD | 包装:管件 封装/外壳:TO-3P-3 整包 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT FIELD STOP 600V 40A TO3PF | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
20A600VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
HiPerFASTIGBT VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity | IXYS IXYS Integrated Circuits Division | IXYS | ||
HITACHIEncapsulation,DIP16 | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Usingnovelfield−stopIGBTtechnology Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Usingnovelfield−stopIGBTtechnology Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
600V,20AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.37Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V,20AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
产品属性
- 产品编号:
FGAF20N60SMD
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- IGBT 类型:
场截止
- 不同 Vge、Ic 时 Vce(on)(最大值):
1.7V @ 15V,20A
- 开关能量:
452µJ(开),141µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
12ns/91ns
- 测试条件:
400V,20A,10 欧姆,15V
- 工作温度:
-55°C ~ 175°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-3P-3 整包
- 供应商器件封装:
TO-3PF
- 描述:
IGBT FIELD STOP 600V 40A TO3PF
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
22+ |
TO-3PF |
6000 |
原装正品可支持验货,欢迎咨询 |
询价 | ||
onsemi/安森美 |
新批次 |
TO-3PF |
4500 |
询价 | |||
onsemi(安森美) |
23+ |
TO-3PF |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ON |
22+ |
TO-3PF |
2160 |
原装现正品可看现货 |
询价 | ||
ON |
23+ |
TO-3PF |
20000 |
询价 | |||
ON |
20+ |
TO-3 |
720 |
授权分销 以芯立信 阳帆前行 |
询价 | ||
ONSemiconductor |
18+ |
NA |
3242 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
Fairchild/ONSemiconducto |
2019+ |
TO-3PF |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
23+ |
N/A |
36400 |
正品授权货源可靠 |
询价 | |||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 |
相关规格书
更多- FGAF40N60SMD
- FGAF40N60UFTU
- FGB.0B.304.CLAD52
- FGB.0B.305.CLAD42Z
- FGB.0B.305.CLAD52Z
- FGB.0B.305.CLAD56Z
- FGB.0B.307.CLAD42Z
- FGB.0B.307.CLAD52Z
- FGB.0B.307.CLAZZ
- FGB.1B.308.CYCD52
- FGB20N60SF
- FGB20N60SFD_F085
- FGB3040G2_F085
- FGB3440G2_F085
- FGB5N60UNDF
- FGBK
- FG-BVX200
- FGC.0B.306.CLAD42
- FGC.3B.324.CLAD72Z
- FGD3040G2_F085
- FGD3325G2_F085
- FGD3N60LSDTM
- FGD4536TM
- FGF.1B.306.CYZZ
- FGG.00.302.CLAD22
- FGG.00.302.CLAD30
- FGG.00.302.CLAD35
- FGG.00.302.ZLA
- FGG.00.303.CLAD35
- FGG.00.304.CLAD22
- FGG.00.304.CLAD30Z
- FGG.00.304.CLAD35Z
- FGG.0B.302.CLAD21
- FGG.0B.302.CLAD31Z
- FGG.0B.302.CLAD42
- FGG.0B.302.CLAD52
- FGG.0B.302.CLAD56
- FGG.0B.302.CLAZ
- FGG.0B.302.CYCD31Z
- FGG.0B.302.CYCD42
- FGG.0B.303.CLAD25
- FGG.0B.303.CLAD35
- FGG.0B.303.CLAD42
- FGG.0B.303.CLAD52
- FGG.0B.303.CLAD56
相关库存
更多- FGAF40N60UFDTU
- FGB.00.303.CLAD22
- FGB.0B.304.CYCD52Z
- FGB.0B.305.CLAD52
- FGB.0B.305.CLAD56
- FGB.0B.305.CYCD42Z
- FGB.0B.307.CLAD52
- FGB.0B.307.CLAD56
- FGB.1B.304.CYCD52Z
- FGB.2B.304.CLAD62
- FGB20N60SFD
- FGB3040CS
- FGB3245G2_F085
- FGB40N60SM
- FGB7N60UNDF
- FG-BVX
- FGC.0B.304.CYCD52Z
- FGC.0B.307.CLAD52Z
- FGC151M
- FGD3245G2_F085
- FGD3440G2_F085
- FGD3N60UNDF
- FGD4536TM_F065
- FGF.1B.308.CLAD62
- FGG.00.302.CLAD27
- FGG.00.302.CLAD30Z
- FGG.00.302.CLAD35Z
- FGG.00.303.CLAD22
- FGG.00.303.CLAD35Z
- FGG.00.304.CLAD22Z
- FGG.00.304.CLAD35
- FGG.00.304.CLAZ
- FGG.0B.302.CLAD31
- FGG.0B.302.CLAD35
- FGG.0B.302.CLAD42Z
- FGG.0B.302.CLAD52Z
- FGG.0B.302.CLAD56Z
- FGG.0B.302.CYCD31
- FGG.0B.302.CYCD35
- FGG.0B.303.CLAD21
- FGG.0B.303.CLAD31
- FGG.0B.303.CLAD35Z
- FGG.0B.303.CLAD42Z
- FGG.0B.303.CLAD52Z
- FGG.0B.303.CLAZ