首页 >FGAF20N60SMD>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
600VN-ChannelMOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE( | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription Usingnovelfield-stopIGBTtechnology,Fairchild’snewseriesoffield-stopIGBTsofferstheoptimumperformanceforautomotivechargers,inverters,andotherapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VC | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Highcurrentcapability,Highinputimpedance | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
IGBT-FieldStop600V,20A Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features •HighCurrentCapability •LowS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
600V,20AFieldStopIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE( | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE( | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Low | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Low | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET-T | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelPowerMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
20Amps600VoltageNChannelMOSFET | FCI Amphenol ICC | FCI | ||
600V,20AN-ChannelMOSFET | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
600V,20AN-ChannelMOSFET | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 |
产品属性
- 产品编号:
FGAF20N60SMD
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- IGBT 类型:
场截止
- 不同 Vge、Ic 时 Vce(on)(最大值):
1.7V @ 15V,20A
- 开关能量:
452µJ(开),141µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
12ns/91ns
- 测试条件:
400V,20A,10 欧姆,15V
- 工作温度:
-55°C ~ 175°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-3P-3 整包
- 供应商器件封装:
TO-3PF
- 描述:
IGBT FIELD STOP 600V 40A TO3PF
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
22+ |
TO-3PF |
6000 |
原装正品可支持验货,欢迎咨询 |
询价 | ||
onsemi/安森美 |
新批次 |
TO-3PF |
4500 |
询价 | |||
onsemi(安森美) |
23+ |
TO-3PF |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ON |
22+ |
TO-3PF |
2160 |
原装现正品可看现货 |
询价 | ||
ONSEMI/安森美 |
2410+ |
TO-3PF |
5000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
询价 | ||
ON |
20+ |
TO-3 |
720 |
授权分销 以芯立信 阳帆前行 |
询价 | ||
ONSemiconductor |
18+ |
NA |
3242 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
Fairchild/ONSemiconducto |
2019+ |
TO-3PF |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
FAIRCHI |
2020+ |
TO-3PF |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
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